| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2N2369AU 2N2369AUA 2N2369AUB 2N4449 2N4449UA 2N444 |
NPN SILICON SWITCHING TRANSISTOR 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AB
NPN BIPOLAR TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IPB100N08S2-07 IPI100N08S2-07 IPP100N08S2-07 SP000 |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管
OPTIMOS⑶ POWER-TRANSISTOR
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10
TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3
晶体管|晶体管|叩| 60V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 40V的五（巴西）总裁| 5A条一c）|11
晶体管|晶体管|叩| 80V的五（巴西）总裁| 5A条一c）|11
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 10A条一（c）|10AC
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五（巴西）总裁| 10A条一（c）|10AC
|
Serpac Electronic Enclosures
Atmel, Corp.
AUK, Corp.
|
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193 |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
COOL MOS⒙ POWER TRANSISTOR
Cool MOS⑩ Power Transistor
Cool MOSPower Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| AT-42036 AT-42036-TR1 AT-42036-BLK |
AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| CP705 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor PNP - High Current Transistor Chip
|
Central Semiconductor Corp
|
| KTC1008 KTC1008GR KTC1008-15 |
EPITAXIAL PLANAR NPN TRANSISTOR
General Purpose Transistor
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
KEC(Korea Electronics)
Korea Electronics (KEC)
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| CP617 |
Small Signal Transistor PNP - Silicon RF Transistor Chip
Chip Form: RF TRANSISTOR
|
Central Semiconductor Corp
|
